Experimental study on the mechanism governing spectral shifts in low power 670 nm AlGaInP multiple quantum well (MQW) laser diodes over temperature range 5–45 °C
| Autor: | Aurangzeb Khurram Hafiz, ram kafle, dhrub sharma, Shereena Joseph, Thoalfiqar A. Zaker, Santosh Chackrabarti |
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| Rok vydání: | 2016 |
| Předmět: |
Physics
Photoluminescence 010308 nuclear & particles physics business.industry Band gap General Physics and Astronomy Atmospheric temperature range Laser 01 natural sciences Redshift law.invention Full width at half maximum Wavelength law 0103 physical sciences Optoelectronics Atomic physics 010306 general physics business Diode |
| Zdroj: | Canadian Journal of Physics. 94:640-644 |
| ISSN: | 1208-6045 0008-4204 |
| DOI: | 10.1139/cjp-2015-0588 |
| Popis: | We report on the temperature-dependent spectral shifts in low power 670 nm AlGaInP multiple quantum well red laser diodes due to band gap narrowing at room temperatures (5–45 °C). The spectral shift mechanism is explored with a threshold current density of 11.41 kA/cm2 and a good characteristic temperature of 114 K. The photoluminescence peak intensity shifts towards higher wavelengths and the full width at half maximum increases with increase in temperature from 5 to 45 °C. We use a Hamiltonian system considering the effective mass approximation to formulate the carrier concentrations. The band gap narrowing value determined by a simple formula amounts to 59.15 meV and displays N1/3 dependence at higher densities. The carrier density dependence conveys that the redshift of the spectral emission is due to band gap narrowing. |
| Databáze: | OpenAIRE |
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