Near-future perspectives for Si and Si1−yGey bipolar transistors
| Autor: | S. Marksteiner, T.F. Meister, A. Felder |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Materials science
business.industry Bipolar junction transistor Spice Doping chemistry.chemical_element Germanium Condensed Matter Physics Epitaxy Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Silicon-germanium chemistry.chemical_compound chemistry Optoelectronics Electrical and Electronic Engineering Diffusion (business) business Common emitter |
| Zdroj: | Microelectronic Engineering. 19:535-538 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/0167-9317(92)90490-i |
| Popis: | The performance limits of self-aligned npn Si-BJTs and SiGe-HBTs are investigated for different types of processing. Using a one-dimensional drift-diffusion equation solver, device simulations are carried out for different doping and germanium profiles. From these simulations network parameters are extracted, which are used as input data for the SPICE-simulation of CML ring oscillators. In addition to one verification profile, three different types of processing are considered, which are designed to give the near-future performance limits of both Si and SiGe bipolar transistors: The first one is a profile as obtained by `conventional' processing utilizing implantation and diffusion. The second one has a heavily doped base and a small, lightly doped emitter region, as might be realizable by epitaxial deposition of in-situ doped layers. The third one is similar to the second one, but uses a Si 0.8 Ge 0.2 /Si-strained base. The simulations show that CML gate delay times of approx. 15 ps, 10 ps and 7 ps, respectively, are realizable with these profiles. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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