Role of Interface Induced Gap States in Polar AlxGa1−xN (0 ≤ x ≤ 1) Schottky Diodes
| Autor: | Biplab Sarkar, Prashant Upadhyay, Yijun Dai, Aakash Jadhav, Wei Guo |
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| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics Band gap business.industry Schottky barrier Contact resistance Schottky diode 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Electronic Optical and Magnetic Materials Semiconductor X-ray photoelectron spectroscopy 0103 physical sciences Materials Chemistry Electrical and Electronic Engineering 0210 nano-technology business Ohmic contact |
| Zdroj: | Journal of Electronic Materials. 50:3731-3738 |
| ISSN: | 1543-186X 0361-5235 |
| Popis: | Barrier height at the interface between metal and polar AlxGa1−xN (0 ≤ x ≤ 1) epitaxial films was investigated using X-ray photoelectron spectroscopy and interface induced gap states (IFIGS) model. The opposite nature of polarization charge yields a significantly lower barrier height in N-polar AlxGa1−xN surface compared to the III-polar counterpart. Accordingly, IFIGS model indicate that III-polar AlxGa1−xN films are advantageous for Schottky contact formation for x |
| Databáze: | OpenAIRE |
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