Electrical properties of CdTe metal–semiconductor field effect transistors

Autor:	D. L. Dreifus, J. R. Tassitino, J. F. Schetzina, R. L. Harper, R. M. Kolbas, R. N. Bicknell
Rok vydání:	1988
Předmět:	Materials science business.industry Transistor Schottky diode Surfaces and Interfaces Condensed Matter Physics Epitaxy Cadmium telluride photovoltaics Surfaces Coatings and Films law.invention Hall effect law Optoelectronics Field-effect transistor MESFET business Molecular beam epitaxy
Zdroj:	Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 6:2722-2724
ISSN:	1520-8559 0734-2101
DOI:	10.1116/1.575493
Popis:	Interest in CdTe field effect transistors and multigated devices stems from the fact that CdTe is lattice matched to HgCdTe. As a consequence, it may be possible to develop a monolithic technology that combines HgCdTe infrared focal plane arrays with on‐board signal processing based on CdTe devices. Although CdTe metal–semiconductor field effect transistors have only recently been fabricated for the first time, rapid improvements in device performance have been realized. All of the devices studied to date have employed CdTe:In epilayers grown by photoassisted molecular‐beam epitaxy. Here we report devices having gold Schottky barriers with reverse breakdown voltages as high as 13.5 V and ideality factors approaching 1.2 which exhibit good depletion mode transistor action. Also, carrier concentrations determined by capacitance–voltage measurements agree with Hall‐effect measurements.
Databáze:	OpenAIRE
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