A Fully Integrated Class 1 Bluetooth 0.25 μm CMOS PA
| Autor: | Koen Mertens, Michel Steyaert |
|---|---|
| Rok vydání: | 2005 |
| Předmět: |
Power-added efficiency
Engineering business.industry Amplifier RF power amplifier Electrical engineering Hardware_PERFORMANCEANDRELIABILITY Surfaces Coatings and Films law.invention Bluetooth Capacitor CMOS Hardware_GENERAL Hardware and Architecture law Signal Processing Hardware_INTEGRATEDCIRCUITS Electronic engineering Power semiconductor device business Flip chip |
| Zdroj: | Analog Integrated Circuits and Signal Processing. 42:103-112 |
| ISSN: | 1573-1979 0925-1030 |
| DOI: | 10.1007/s10470-005-5746-0 |
| Popis: | A fully integrated 0.25µm CMOS bluetooth class 1 power amplifier is presented. On this chip all inductors and decoupling capacitors are situated on the silicon die. Due to the high level of integration a cheap flip chip assembly method has been used. The chip delivers 138mW (21.4dBm) of output power with a power added efficiency of 25.8%. When the amplifier is tuned to its optimum frequency of 2.1GHz, the output power increases to 184mW and the power added efficiency to 29.5%. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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