Immobilization of DNA on CMOS compatible materials
Autor: | Jean-François Remacle, P.E. Lobert, Denis Flandre, D. Bourgeois, A. Akheyar, Rémi Pampin, Luis Moreno Hagelsieb |
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Rok vydání: | 2003 |
Předmět: |
inorganic chemicals
Fabrication Materials science Silicon Oxide chemistry.chemical_element Nanotechnology Integrated circuit complex mixtures law.invention chemistry.chemical_compound law Materials Chemistry Electrical and Electronic Engineering Silicon oxide Instrumentation business.industry technology industry and agriculture Metals and Alloys Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Semiconductor CMOS chemistry business DNA |
Zdroj: | Sensors and Actuators B: Chemical. 92:90-97 |
ISSN: | 0925-4005 |
DOI: | 10.1016/s0925-4005(03)00096-0 |
Popis: | The main interface and interconnection materials normally used in complementary metal-oxide semiconductor (CMOS) integrated circuit processing, i.e. silicon oxides and aluminum, were evaluated with regards to deoxyribonucleic acid (DNA) attachment. We investigated and quantified the influence of various techniques of fabrication of the silicon oxide on DNA binding obtained by four different biochemical processes. Regarding aluminum, we found that it only binds DNA in the presence of its natural oxide and that it is severely degraded by one of the three typical biochemical processes. Optimal process conditions for DNA binding on silicon oxides with aluminum compatibility are finally derived. (C) 2003 Elsevier Science B.V. All rights reserved. |
Databáze: | OpenAIRE |
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