In situ microwave characterisation of medium-k HfO2 and high-k SrTiO3 dielectrics for metal–insulator–metal capacitors integrated in back-end of line of integrated circuits

Autor:	Alexis Farcy, B. Guigues, Joaquim Torres, Y. Morand, Emmanuel Defay, T. Bertaud, Serge Blonkowski, Bernard Flechet, T.T. Vo, Cedric Bermond, Thierry Lacrevaz
Rok vydání:	2008
Předmět:	Permittivity Materials science business.industry Copper interconnect Electrical engineering Dielectric Integrated circuit Microstrip law.invention Back end of line Capacitor law Optoelectronics Electrical and Electronic Engineering business High-κ dielectric
Zdroj:	IET Microwaves, Antennas & Propagation. 2:781-788
ISSN:	1751-8733 1751-8725
DOI:	10.1049/iet-map:20070344
Popis:	Integration of high permittivity dielectrics or commonly named high- k dielectrics is widely investigated as a way to reduce passive component size in the chip. The complex permittivity microwave characterisation of medium- k materials such as HfO 2 and high- k materials such as SrTiO 3 is presented. The characterisation method, using coplanar, microstrip waveguides or metal-insulator-metal (MIM) capacitor, allows a large band characterisation, from 40-MHz to 40-GHz. It also allows investigating these materials with a large-scale thickness, from 10 up to 500-nm, in different technological configurations, appropriate for insulators from immature to mature, that is, those which are ready for the integration in an advanced damascene architecture of MIM capacitor. It is shown that the permittivity of such materials can be process- and frequency-dependent.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f9ffe7a1b048a77141df58fcfc6fa5a3 https://doi.org/10.1049/iet-map:20070344 Zobrazit plný text záznamu