Photoconductivity of CdTe nanocrystal films in a simple multilayer device structure

Autor:	Akira Ueda, A Steigerwald, D. Jowhar, Monique D. Ewan, R. Mu, R. Aga, Z. Pan, W E Collins
Rok vydání:	2008
Předmět:	Photocurrent Materials science business.industry Photoconductivity Analytical chemistry Condensed Matter Physics Cadmium telluride photovoltaics Nanocrystal Electrode Optoelectronics General Materials Science Quantum efficiency business Short circuit Dark current
Zdroj:	Journal of Physics: Condensed Matter. 20:385206
ISSN:	1361-648X 0953-8984
DOI:	10.1088/0953-8984/20/38/385206
Popis:	The photoconductivity of CdTe nanocrystal films was investigated by employing a ZnO/CdTe/In multilayer device structure. CdTe was deposited on a ZnO electrode by a pulsed electron-beam technique at argon background gas pressures of 9, 13 and 17 mTorr. Using two photo-excitation sources (visible and near-infrared), the device with the CdTe deposited at 17 mTorr demonstrated the highest photocurrent to dark current ratio, suggesting the highest quantum efficiency among the three different devices. It also demonstrated the highest short circuit photocurrent and the fastest photocurrent decay. These results are attributed to the formation of more nanocrystals at 17 mTorr with enhanced optoelectronic properties.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f9ebc51d1fd9af61c96b6c3ad5881c93 https://doi.org/10.1088/0953-8984/20/38/385206 Zobrazit plný text záznamu