Autor:	P. D. Wright, T. Cella, R. J. Nelson
Rok vydání:	1980
Předmět:	Materials science Physics and Astronomy (miscellaneous) business.industry Photoresistor Bipolar junction transistor Transistor Heterojunction Semiconductor device Epitaxy law.invention Photodiode Spectral sensitivity law Optoelectronics business
Zdroj:	Applied Physics Letters. 37:192-194
ISSN:	1077-3118 0003-6951
Popis:	InGaAsP‐InP heterojunction phototransistors have been fabricated by liquid phase epitaxy. The phototransistors have optical gains greater than 100 for 1.26‐μm radiation. High internal current gains (≳300) have been achieved. Phototransistor relative spectral response has been measured for wavelengths in the range 0.7–1.5 μm.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f9dfd9f5e7f00951aff6f63ec8e64b12 https://doi.org/10.1063/1.91821 Zobrazit plný text záznamu