Impact of Surface Treatment of Si3N4 on Subsequent SiO2 Deposition
| Autor: | Francesco Pipia, Silvio Vendrame, Enrica Ravizza, Simona Spadoni, Luisito Livellara, Francesca Milanesi |
|---|---|
| Rok vydání: | 2014 |
| Předmět: |
Surface (mathematics)
Materials science business.industry Oxide Wet cleaning Dielectric Condensed Matter Physics Atomic and Molecular Physics and Optics chemistry.chemical_compound chemistry Trench Forensic engineering Deposition (phase transition) Optoelectronics General Materials Science Node (circuits) business |
| Zdroj: | Solid State Phenomena. 219:36-39 |
| ISSN: | 1662-9779 |
| Popis: | In a typical Power Device on the 0.16μm node, the isolation module is one of the most critical steps. The trench to be filled in those devices is rather deep and needs a considerable amount of a suitable dielectric material. The choice of dielectric in the present paper is falling on the SubAtmosphericUndopedSilicaGlass (SAUSG oxide) [1]. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|