AlGaN/GaN heterostructure field-effect transistors with multi-MgxNy/GaN buffer and Photo-CVD SiO2 gate dielectric
| Autor: | Ping-Chuan Chang, Yan-Kuin Su, K. H. Lee, Shoou-Jinn Chang |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
Passivation business.industry Gate dielectric Heterojunction Chemical vapor deposition Dielectric Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials Plasma-enhanced chemical vapor deposition Materials Chemistry Optoelectronics Breakdown voltage Electrical and Electronic Engineering business |
| Zdroj: | Solid-State Electronics. 72:38-43 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2012.02.009 |
| Popis: | We report the fabrication of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors (MOS-HFETs) with multi-MgxNy/GaN as an epitaxial buffer and using SiO2 dielectric by photochemical vapor deposition (Photo-CVD) simultaneously for surface passivation and as gate insulator. High quality SiO2 dielectric was successfully deposited onto AlGaN by Photo-CVD compared with the traditional plasma enhanced chemical vapor deposition (PE-CVD). Compared to conventional AlGaN/GaN HFET, the MOS-HFET with Photo-CVD SiO2 exhibits lower leakage current, higher breakdown voltage and channel current. It was also observed that our MOS-HFETs presented pure 1/f noise with smaller trapping effects and improved immunity to the RF current collapse. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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