Formation of Carbon Layers by the Thermal Decomposition of Carbon Tetrachloride in a Reactor for MOCVD Epitaxy

Autor:	M. V. Dorokhin, A. V. Zdoroveyshchev, Yu. A. Danilov, M. P. Temiryazeva, S. M. Plankina, P. B. Demina, O. V. Vikhrova, Ivan Antonov, B. N. Zvonkov, Aleksey Nezhdanov, M. N. Drozdov, R. N. Kriukov
Rok vydání:	2020
Předmět:	010302 applied physics Materials science Thermal decomposition chemistry.chemical_element 02 engineering and technology Chemical vapor deposition 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Atomic and Molecular Physics and Optics Nanocrystalline material Electronic Optical and Magnetic Materials Carbon film chemistry Chemical engineering 0103 physical sciences Graphite Metalorganic vapour phase epitaxy 0210 nano-technology Carbon
Zdroj:	Semiconductors. 54:956-960
ISSN:	1090-6479 1063-7826
DOI:	10.1134/s106378262008028x
Popis:	A new method for depositing carbon films by the thermal decomposition of carbon tetrachloride (CCl4) in a hydrogen flux in a reactor for metal-organic chemical vapor deposition (MOCVD) at atmospheric pressure is developed. From the results obtained by Raman spectroscopy, it can be conceived that the carbon layers produced by this method are the disordered nanocrystalline graphite. It is shown that such carbon layers can be used in the technological cycle of the production of gallium-arsenide optoelectronic device structures (among them spin light-emitting diodes with a CoPt injector).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f9cfd1e937a1d6d87ad1c8e496383727 https://doi.org/10.1134/s106378262008028x Zobrazit plný text záznamu Plný text ve formátu PDF Plný text ve formátu HTML
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