Ultra Low Contact Resistivities for CMOS Beyond 10-nm Node
| Autor: | M. Guillorn, Jeffrey W. Sleight, Jemima Gonsalves, Christian Lavoie, Sebastian Engelmann, Siyuranga O. Koswatta, Fei Liu, Zhen Zhang, J. Newbury, Ashish Baraskar, Paul M. Solomon, A. Pyzyna, Yu Zhu, Wei Song, Cyril Cabral, S. W. Bedell, Michael F. Lofaro, Marinus Hopstaken, Li Yang, Mark Raymond, Kenneth P. Rodbell, Ahmet S. Ozcan, C. Witt |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
business.industry Contact resistance Doping chemistry.chemical_element Electronic Optical and Magnetic Materials PMOS logic chemistry.chemical_compound CMOS chemistry Silicide Electronic engineering Optoelectronics Node (circuits) Electrical and Electronic Engineering business Boron |
| Zdroj: | IEEE Electron Device Letters. 34:723-725 |
| ISSN: | 1558-0563 0741-3106 |
| Popis: | Contact resistances are directly measured for contacts with sizes from 25 to 330 nm using e-beam based nano-TLM devices. Record low contact resistivities ~1.5 × 10-9 Ω· cm2 are extracted from Ni(Pt) silicide contacts on in situ boron-doped Si0.7Ge0.3 with a chemical boron-doping density of 2 × 1021/cm3. This is very promising for pMOS applications beyond the 10-nm node. A clear dependence of contact resistance on the silicide thickness has also been found. |
| Databáze: | OpenAIRE |
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