Self-aligned locally diffused emitter (SALDE) silicon solar cell
| Autor: | Toru Abe, Edgar L. Kochka, Preston Davis, Satoshi Yamanaka, John R. Easoz, Jalal Salami, Akio Shibata, Daniel L. Meier, Kazuo Kinoshita |
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| Rok vydání: | 1997 |
| Předmět: |
Materials science
Silicon Renewable Energy Sustainability and the Environment business.industry Doping chemistry.chemical_element Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Rapid thermal processing Aluminium Shield Screen printing Optoelectronics business Layer (electronics) Common emitter |
| Zdroj: | Solar Energy Materials and Solar Cells. 48:159-165 |
| ISSN: | 0927-0248 |
| Popis: | This paper presents, for the first time, a low-cost, high-throughput manufacturing approach for fabricating n-base dendritic web silicon solar cells with selectively doped emitters and self-aligned aluminum contacts using rapid thermal processing (RTP) and screen printing. The self-aligned locally diffused emitter (SALDE) structure is p + nn ++ where aluminum is screen-printed on a boron-doped emitter and fired in a belt furnace to form a deep self-doped p + -layer and a self-aligned positive contact to the emitter according to the well-known aluminum-silicon (AlSi) alloying process. The SALDE structure preserves the shallow emitter (20.2 μm) everywhere except directly beneath the emitter contact. There the junction depth is greater than 5 μm, as desired, in order to shield carriers in the bulk silicon from that part of the silicon surface covered by metal where the recombination rate is high. This structure is realized by using n-base (rather than p-base) substrates and by utilizing screen-printed aluminum (rather than silver) emitter contacts. Prototype dendritic web silicon (web) cells (25 cm 2 area) with efficiencies up to 13.2% have been produced. |
| Databáze: | OpenAIRE |
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