Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
| Autor: | Chen Han Chou, Wen-Kuan Yeh, Chao-Hsin Chien, Yu Hong Lu, An Shih Shih, Yi He Tsai |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science business.industry Gate stack chemistry.chemical_element 02 engineering and technology Yttrium 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials chemistry 0103 physical sciences Optoelectronics 0210 nano-technology business Layer (electronics) |
| Zdroj: | ECS Journal of Solid State Science and Technology. 7:N15-N19 |
| ISSN: | 2162-8777 2162-8769 |
| DOI: | 10.1149/2.0161802jss |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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