Silicon-on-Sapphire, a replacement for gallium arsenide?

Autor:	George. P. Imthurn
Rok vydání:	2009
Předmět:	Materials science Silicon business.industry Wide-bandgap semiconductor chemistry.chemical_element Silicon on insulator Gallium arsenide chemistry.chemical_compound Semiconductor chemistry CMOS Silicon on sapphire Optoelectronics Radio frequency business
Zdroj:	2009 IEEE International SOI Conference.
DOI:	10.1109/soi.2009.5318759
Popis:	Silicon-on-Sapphire (SOS) was invented in 1961 and as such is the first of the SOI technologies. Its original purpose was to provide radiation tolerant circuits for satellites and missiles. Now, SOS is ready to displace gallium arsenide (GaAs) as the technology of choice for RF communications in commercial applications. What are the reasons for this? I will share what we have learned at Peregrine Semiconductor about how to use CMOS for RF devices and why silicon will eventually displace GaAs from many RF applications.
Databáze:	OpenAIRE
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