Autor:	S. N. Chupyra, P. N. Gorlei, M. I. Ilashchuk, K. S. Ul'yanitskii, O. A. Parfenyuk, V. R. Burachek
Rok vydání:	2003
Předmět:	Quenching Chemistry General Chemical Engineering Photoconductivity Doping Metals and Alloys Analytical chemistry Acceptor Cadmium telluride photovoltaics Ion Inorganic Chemistry Photosensitivity Vacancy defect Materials Chemistry Nuclear chemistry
Zdroj:	Inorganic Materials. 39:1127-1131
ISSN:	0020-1685
DOI:	10.1023/a:1027385122472
Popis:	The spectral and temperature dependences of photoconductivity in CdTe〈Pb〉 crystals under band-gap and combined excitation were studied at photon energies in the range 0.53–1.7 eV and temperatures from 80 to 300 K. The high photosensitivity of the crystals and the observed IR and temperature quenching of photoconductivity indicate that, just as in CdTe〈Ge〉 and CdTe〈Sn〉, the recombination processes in CdTe〈Pb〉 are dominated by deep centers with drastically different capture cross sections for electrons and holes. Some parameters of the centers are determined. The results suggest that the likely defect species responsible for the high photosensitivity of CdTe〈Pb〉 is an acceptor complex consisting of a Cd vacancy and a metal (Ge, Sn, Pb) ion on the Cd site: (V 2– CdM+)–/0.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f9b584de46bedb865424e5b1b62ced0a https://doi.org/10.1023/a:1027385122472 Zobrazit plný text záznamu Full text from SpringerLink