Influence of broad Ga1/2Al1/2As interfaces on the dispersion of the interface modes in binary GaAs/AlAs superlattices
| Autor: | Y. B. Ning, W. R. Datars, V. V. Gridin |
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| Rok vydání: | 1988 |
| Předmět: |
chemistry.chemical_classification
Materials science Condensed matter physics Mathematical model business.industry Phonon Superlattice Interface (computing) General Physics and Astronomy Binary number Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter::Materials Science Optics chemistry Dispersion relation Dispersion (optics) business Inorganic compound |
| Zdroj: | Journal of Applied Physics. 64:6806-6809 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.342018 |
| Popis: | We developed a model for the calculation of the dispersion curves of the interface optic phonons in a superlattice with a unit cell composed of a four‐layer sequence, ABCD. Allowing the B,D layers to represent the mixed Ga1/2Al1/2As broad interfaces imposed between the binary A(GaAs) and C(AlAs) layers with a reduced thickness, we applied the model to study the influence of the thickness of the B,D layers on the dispersion relation of the interface modes in this type of a superlattice. An application of this model is to estimate the influence of significant thermal annealing on the dispersion of the interface modes in GaAs/AlAs superlattices. |
| Databáze: | OpenAIRE |
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