| Autor: |
Cansong Zhao, Jin Ma, Zhao Li, Yi Luo, Xianjin Feng |
| Rok vydání: |
2015 |
| Předmět: |
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| Zdroj: |
Materials Research Bulletin. 70:354-357 |
| ISSN: |
0025-5408 |
| Popis: |
Highlights: • Al{sub 2x}In{sub 2−2x}O{sub 3} films were prepared on the Y-stabilized ZrO{sub 2} (1 1 1) substrates by MOCVD at 700 °C. • A phase transition from the bixbyite In{sub 2}O{sub 3} structure to the amorphous structure was observed. • The lowest resistivity of 4.7 × 10{sup −3} Ω cm was obtained for the Al{sub 0.4}In{sub 1.6}O{sub 3} film. • Tunable optical band gap from 3.7 to 4.8 eV was obtained. - Abstract: The ternary Al{sub 2x}In{sub 2−2x}O{sub 3} films with different Al contents of x [Al/(Al + In) atomic ratio] have been fabricated on the Y-stabilized ZrO{sub 2} (1 1 1) substrates by metal organic chemical vapor deposition at 700 °C. The structural, electrical and optical properties of the films as a result of different Al contents (x = 0.1–0.9) were investigated in detail. With the increase of Al content from 10% to 90%, a phase transition from the bixbyite In{sub 2}O{sub 3} structure with a single orientation along (1 1 1) to the amorphous structure was observed. The minimum resistivity of 4.7 × 10{sup −3} Ω cm, a carrier concentration of 1.4 × 10{sup 20} cm{sup −3} and a Hall mobility of 9.8 cm{sup 2} v{sup −1}more » s{sup −1} were obtained for the sample with x = 0.2. The average transmittances for the Al{sub 2x}In{sub 2−2x}O{sub 3} films in the visible range were all over 78% and the optical band gap of the films could be tuned from 3.7 to 4.8 eV.« less |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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