Failure mode analysis of planar zinc‐diffused In0.53Ga0.47Asp‐i‐nphotodiodes

Autor:	F. Ermanis, A. K. Chin, F. S. Chen
Rok vydání:	1984
Předmět:	Materials science Scanning electron microscope Microplasma business.industry General Physics and Astronomy Epitaxy Photodiode law.invention Planar law Optoelectronics Wafer business Leakage (electronics) Diode
Zdroj:	Journal of Applied Physics. 55:1596-1606
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.333420
Popis:	In order to understand the irreversible failure mechanisms of planar InGaAs p‐i‐n photodiodes, 32 devices from 19 different wafers that shorted during aging were first examined in the scanning electron microscope. Included were devices that failed during long term aging (>103 h) as well as those that failed during short term aging (
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f9b0f11999c94eeac126de42b30e76e1 https://doi.org/10.1063/1.333420 Zobrazit plný text záznamu