Cluster Model Studies of Atomic Ordering in Group III Sublattice Growth over P-Rich InGaP2(001) Surfaces

Autor:	Krishnan Raghavachari, Benjamin C. Gamoke
Rok vydání:	2013
Předmět:	Crystallography General Energy Materials science Group (periodic table) Cluster (physics) Compound semiconductor Physical and Theoretical Chemistry Ternary operation Epitaxy Surfaces Coatings and Films Electronic Optical and Magnetic Materials
Zdroj:	The Journal of Physical Chemistry C. 117:2078-2083
ISSN:	1932-7455 1932-7447
DOI:	10.1021/jp305743x
Popis:	Atomic ordering in vapor-phase epitaxially grown ternary III–V compound semiconductor alloys is a topic of active interest. In this paper, the mechanistic steps involved in the growth of the group ...
Databáze:	OpenAIRE
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