Studies of Hg[sub (1-x)]Cd[sub x]Te Formation by Electrochemical Atomic Layer Deposition and Investigations into Bandgap Engineering
| Autor: | Nagarajan Jayaraju, Chandru Thambidurai, Steve M. Cox, Venkatram Venkatasamy, John L. Stickney |
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| Rok vydání: | 2007 |
| Předmět: |
Renewable Energy
Sustainability and the Environment Annealing (metallurgy) Band gap Chemistry Superlattice Analytical chemistry Quartz crystal microbalance Electron microprobe Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Atomic layer deposition Materials Chemistry Electrochemistry Atomic layer epitaxy Fourier transform infrared spectroscopy |
| Zdroj: | Journal of The Electrochemical Society. 154:H720 |
| ISSN: | 0013-4651 |
| Popis: | Films of Hg (1-x) Cd x Te (MCT) were grown using electrochemical atomic layer deposition, the electrochemical analog of atomic layer epitaxy, and atomic layer deposition (ALD). The present study describes the growth of MCT via electrochemical ALD, using an automated electrochemical flow cell deposition system. The system allows potential control and solution exchange as desired. Deposits were characterized using X-ray diffraction, electron probe microanalysis, and reflection absorption Fourier transform infrared spectroscopy. The as-deposited films showed strong (111) preferred orientation. No postdeposition annealing was required. Changes in deposit composition showed the expected trend in bandgaps: the more Hg the lower the bandgap, but with some significant deviations. Deposit composition was controlled using a superlattice deposition program. Hg 0.5 Cd 0.5 Te and Hg 0.8 Cd 0.2 Te deposits resulted in bandgaps of 0.70 and 0.36 eV, respectively. Electrochemical quartz crystal microbalance studies, using an automated flow cell, indicated that some deposited Cd was stripping at potentials used to deposit Hg. In addition, redox replacement of Cd for Hg was evident, a function of the greater stability of Hg than Cd. |
| Databáze: | OpenAIRE |
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