Effects of SiON/III-nitride interface properties on device performances of GaN-based power field-effect transistors
Autor: | Liang Huinan, Cheng Wanxi, Feiyu Li, Gao Jun, Pengcheng Tao, Yanhong Liu, Zhonghao Sun, Nan Sun, Hongzhou Wang, Wang Ronghua, Shaoquan Li, Ren Yongshuo, Song Shukuan, Huolin Huang |
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Rok vydání: | 2020 |
Předmět: | |
Zdroj: | Journal of Physics D: Applied Physics. 54:025109 |
ISSN: | 1361-6463 0022-3727 |
Databáze: | OpenAIRE |
Externí odkaz: |