A neutron damage study of liquid phase epitaxial GaAs and high purity silicon
| Autor: | Dimitri Alexiev, J.W. Boldeman, K.S.A. Butcher |
|---|---|
| Rok vydání: | 1995 |
| Předmět: |
Nuclear and High Energy Physics
Materials science Deep-level transient spectroscopy Silicon business.industry Astrophysics::High Energy Astrophysical Phenomena Schottky barrier Nuclear Theory chemistry.chemical_element Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Particle detector Neutron temperature law.invention chemistry law Van de Graaff generator Radiation damage Optoelectronics Neutron Nuclear Experiment business Instrumentation |
| Zdroj: | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 95:355-370 |
| ISSN: | 0168-583X |
| DOI: | 10.1016/0168-583x(94)00467-6 |
| Popis: | Neutron irradiation studies of silicon and liquid phase epitaxial (LPE) GaAs Schottky barrier radiation detectors were carried out using 1.1 MeV fast neutrons produced using the Australian Nuclear Science and Technology Organisation's 3 MeV Van de Graaff accelerator. Neutrons were provided by bombardment of a 7 Li target with 3 MeV protons to a maximum fluence of 7 × 10 13 neutrons cm −2 . Neutron damage to the detectors was characterised using capacitive deep level transient spectroscopy, optical deep level transient conductance spectroscopy, current-voltage measurements and capacitance-voltage measurements. The degradation of 241 Am spectra was also observed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect