On the reliable analysis of indium mole fraction within InxGa1−xN quantum wells using atom probe tomography

Autor:	Theeradetch Detchprohm, Lincoln J. Lauhon, James R. Riley, Christian Wetzel
Rok vydání:	2014
Předmět:	Condensed Matter::Quantum Gases Physics and Astronomy (miscellaneous) Phonon Chemistry chemistry.chemical_element Atom probe Mole fraction law.invention Ion law Tomography Atomic physics Quantum well Indium Surface reconstruction
Zdroj:	Applied Physics Letters. 104:152102
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.4871510
Popis:	Surface crystallography and polarity are shown to influence the detection probability of In, Ga, and N ions during atom probe tomography analysis of InxGa1−xN m-plane, c-plane, and (202¯1¯) quantum wells. A N deficit is observed in regions of the reconstruction generated from Ga-polar surfaces, and the probability of detecting group-III atoms is lower in InxGa1−xN quantum wells than in GaN barrier layers. Despite these artifacts, the detected In mole fraction is consistent throughout a given quantum well regardless of the crystal orientation of the quantum well or the evaporation surface from which the reconstruction was generated.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f99a7f1df659bef774057fbb12a4f0e5 https://doi.org/10.1063/1.4871510 Zobrazit plný text záznamu