Unusual Threshold Voltage Shift Caused by Self-Heating-Induced Charge Trapping Effect
| Autor: | Ching-Chieh Shih, Chia-Sheng Lin, Shih-Ching Chen, An-Kuo Chu, Hung Wei Li, Ming-Hsien Lee, Ting-Chang Chang, Jim-Shone Chen, Te-Chih Chen, Fu-Yen Jian |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
Condensed matter physics General Chemical Engineering Analytical chemistry Substrate (electronics) Trapping Electrostatic induction Threshold voltage Body contact Thin-film transistor Electrochemistry General Materials Science Grain boundary Electrical and Electronic Engineering Physical and Theoretical Chemistry Self heating |
| Zdroj: | Electrochemical and Solid-State Letters. 13:H95 |
| ISSN: | 1099-0062 |
| Popis: | This article investigates the threshold voltage (V t ) shift induced by a self-heating effect for n-channel low temperature poly-Si thin film transistors (TFTs) and finds that there is a shift of more than 3 V in the negative direction after a self-heating operation of 100 ms. The negative V t shift can be attributed to the charge-trapping effect caused by the holes generated by trap-assisted band-to-band thermionic field emission and trapped in the grain boundary of the poly-Si film substrate. We used lateral body contact structure to verify that this unusual V t shift is related to the holes trapped in the substrate. |
| Databáze: | OpenAIRE |
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