| Autor: |
Edward Yi Chang, S.H. Chen, Di-Hong Lee |
| Rok vydání: |
2002 |
| Předmět: |
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| Zdroj: |
2000 Asia-Pacific Microwave Conference. Proceedings (Cat. No.00TH8522). |
| DOI: |
10.1109/apmc.2000.925757 |
| Popis: |
A high efficiency and high linearity 1.2 V operational AlGaAs-InGaAs-GaAs pseudomorphic high electron mobility transistor (PHEMT) for digital wireless personal handy phone (PHS) handset application has been developed. The device exhibits maximum power added efficiency (PAE) of 43.62% at 1.2 V drain bias. Under 1.9 GHz/4-shifted QPSK modulated PHS signal, the device shows an output power of 22.02 dBm with linear efficiency of 37% and adjacent channel leakage power (ACP) of -56.86 dBc at 600 kHz apart from the center frequency. The device developed shows excellent performance at 1.2 V operation and can be used for low voltage PHS handset application. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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