Interphase boundary layer-dominated strain mechanisms in Cu+ implanted Zr-Nb nanoscale multilayers
Autor: | Jiří Čapek, H.S. Sen, Tomas Polcar, M. Vronka, Miroslav Karlík, Mauro Callisti, Peter Minárik, Petr Bábor, Nabil Daghbouj, Jaroslav Čech, Vladimír Havránek |
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Rok vydání: | 2021 |
Předmět: |
010302 applied physics
Materials science Polymers and Plastics Strain (chemistry) Metals and Alloys 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials Ion Metal Ion implantation Deformation mechanism visual_art 0103 physical sciences Ceramics and Composites visual_art.visual_art_medium Radiation damage Interphase Composite material 0210 nano-technology Layer (electronics) |
Zdroj: | Acta Materialia. 202:317-330 |
ISSN: | 1359-6454 |
Popis: | Sputter-deposited Zr/Nb nanoscale metallic multilayers with a periodicity of 27 (thin) and 96 nm (thick) were subjected to Cu+implantation with low and high fluences and then studied using various experimental techniques in combination with DFT calculations. After Cu+ implantation, the thinner multilayer exhibited a tensile strain along c-axis in Nb layers and a compressive strain in Zr layers, while the thicker multilayer showed a compressive strain in both layers. The strain is higher in the thin multilayer and increases for higher fluences. We developed a mathematical method for the fundamental understanding of the deformation mechanisms in metallic multilayers subjected to radiation damage. In the model, the cumulative strain within a layer is described as the combination of two contributions coming from the interfacial region and the inner region of the layers. The semi-analytical model predicts that the interfacial strain is dominant and extends over a certain region around the interface. Predictions are well supported by ab-initio calculations which show that in the vicinity of the interface and in the Zr side, vacancies and interstitials (low energy barriers) exhibit high mobility compared to the Nb side, thus resulting in a high recombination rate. As a consequence, less strain occurs in the Zr side of the interface compared to the Nb side. The density and distribution of various types of defects along the ion profile (low and high damaged regions) are obtained by combining DFT results and the predictions of the model. |
Databáze: | OpenAIRE |
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