Preparation and Characterization of PZT Thin Films on CeO 2(111)/Si(111) Structures

Autor:	Hiroshi Ishiwara, Eisuke Tokumitu, Ikuo Sakai
Rok vydání:	1996
Předmět:	Materials science Silicon General Engineering General Physics and Astronomy chemistry.chemical_element Mineralogy Epitaxy Evaporation (deposition) Ferroelectricity Buffer (optical fiber) Characterization (materials science) chemistry Chemical engineering Breakdown strength Thin film
Zdroj:	Japanese Journal of Applied Physics. 35:4987
ISSN:	1347-4065 0021-4922
Popis:	We report the crystalline quality and electrical properties of PbZr1-x TixO3 (PZT) films on Si substrates with epitaxially grown CeO2 buffer layers. CeO2 buffer layers were deposited by the electron-beam-assisted evaporation technique, and PZT films were formed by the sol-gel technique. It is shown that CeO2 buffer layers, which were epitaxially grown on Si(111) substrates at 500°C, effectively suppressed Si and Pb interdiffusion between PZT films and Si substrates. Furthermore, the capacitance-voltage and current-voltage properties of PZT/CeO2/Si indicated a ferroelectric nature and excellent breakdown strength.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f9895ca0d8142dae3945c6857d57160c https://doi.org/10.1143/jjap.35.4987 Zobrazit plný text záznamu