Al 2 O 3 thin films by plasma-enhanced chemical vapour deposition using trimethyl-amine alane (TMAA) as the Al precursor

Autor:	C.W. Pitt, C.E. Chryssou
Rok vydání:	1997
Předmět:	Carbon film Plasma-enhanced chemical vapor deposition Chemistry Scanning electron microscope Analytical chemistry Deposition (phase transition) General Materials Science General Chemistry Substrate (electronics) Chemical vapor deposition Thin film Combustion chemical vapor deposition
Zdroj:	Applied Physics A: Materials Science & Processing. 65:469-475
ISSN:	1432-0630 0947-8396
Popis:	O3 thin films by plasma-enhanced chemical vapour deposition (PECVD) using trimethyl-amine alane (TMAA) as the Al precursor. The thin films were deposited on both Si and quartz silica (SiO2) substrates. Deposition rates were typically 60 A min-1 keeping the TMAA temperature constant at 45 °C. The deposited Al2O3 thin films were stoichiometric alumina with low carbon contamination (0.7–1.3 At%). The refractive index ranged from 1.54 to 1.62 depending on the deposition conditions. The deposition rate was studied as a function of both the RF power and the substrate temperature. The structure and the surface of the deposited Al2O3 thin films were studied using X-ray diffraction, atomic force microscopy (AFM) and scanning electron microscopy (SEM).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f982ba50cea6d8f74a27557a101d0c38 https://doi.org/10.1007/s003390050611 Zobrazit plný text záznamu Plný text ve formátu PDF