MOVPE of Large-Scale MoS2/WS2, WS2/MoS2, WS2/Graphene and MoS2/Graphene 2D-2D Heterostructures for Optoelectronic Applications
| Autor: | Tilmar Kümmell, Andrew Pakes, Ben R. Conran, Annika Grundmann, Gerd Bacher, Dominik Andrzejewski, Clifford McAleese, Kenneth B. K. Teo, Michael Heuken, Andrei Vescan, Holger Kalisch |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
business.industry Graphene Mechanical Engineering Exciton Stacking Nucleation Heterojunction 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences 0104 chemical sciences law.invention Semiconductor Mechanics of Materials law Monolayer Optoelectronics General Materials Science Metalorganic vapour phase epitaxy 0210 nano-technology business |
| Zdroj: | MRS Advances. 5:1625-1633 |
| ISSN: | 2059-8521 |
| DOI: | 10.1557/adv.2020.104 |
| Popis: | Most publications on (opto)electronic devices based on 2D materials rely on single monolayers embedded in classical 3D semiconductors, dielectrics and metals. However, heterostructures of different 2D materials can be employed to tailor the performance of the 2D components by reduced defect densities, carrier or exciton transfer processes and improved stability. This translates to additional and unique degrees of freedom for novel device design. The nearly infinite number of potential combinations of 2D layers allows for many fascinating applications. Unlike mechanical stacking, metal-organic vapour phase epitaxy (MOVPE) can potentially provide large-scale highly homogeneous 2D layer stacks with clean and sharp interfaces. Here, we demonstrate the direct successive MOVPE of MoS2/WS2 and WS2/MoS2 heterostructures on 2” sapphire (0001) substrates. Furthermore, the first deposition of large-scale MoS2/graphene and WS2/graphene heterostructures using only MOVPE is presented and the influence of growth time on nucleation of WS2 on graphene is analysed. |
| Databáze: | OpenAIRE |
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