Development of the Silicon Drift Detector for Electron Microscopy Applications

Autor:	Lothar Strüder, Heike Soltau, Adrian Niculae, P. Holl
Rok vydání:	2020
Předmět:	Materials science General Computer Science Silicon drift detector 010308 nuclear & particles physics Scanning electron microscope business.industry Detector geometry Detector Resolution (electron density) 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Microanalysis law.invention Optics Semiconductor law 0103 physical sciences Electron microscope 0210 nano-technology business
Zdroj:	Microscopy Today. 28:46-53
ISSN:	2150-3583 1551-9295
DOI:	10.1017/s1551929520001327
Popis:	In the 50 years since the first mating of semiconductor-based energy-dispersive X-ray spectrometry (EDS) with the scanning electron microscope (SEM), this hybrid instrument has become an indispensable microanalytical tool. In the last two decades a new detector, the silicon drift detector (SDD), has overtaken earlier Si(Li) technology and has made EDS in the SEM and TEM faster and better. This article tells the story of the SDD development and describes improvements in count rate capability, energy resolution, and detector geometry that bring to SEM microanalysis exceptional precision and stability. Quality maps of element distributions can now be obtained in minutes instead of hours.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f9750a1947dbef6b9daadc570de4b6f5 https://doi.org/10.1017/s1551929520001327 Zobrazit plný text záznamu Plný text ve formátu PDF Plný text ve formátu HTML
Nepřihlášeným uživatelům se plný text nezobrazuje	K zobrazení výsledku je třeba se přihlásit.