Annealing Effect on ITO Films Sputtered with Argon, Oxygen and Hydrogen
| Autor: | Rein, M.H., Mayandi, J., Olaisen, B.R., Holt, A., Monakhov, E. |
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| Jazyk: | angličtina |
| Rok vydání: | 2009 |
| Předmět: | |
| DOI: | 10.4229/24theupvsec2009-3bv.4.23 |
| Popis: | 24th European Photovoltaic Solar Energy Conference, 21-25 September 2009, Hamburg, Germany; 2817-2820 Sputtered indium tin oxide (ITO) has been studied as a TCO for solar cell application. The deposition was performed with an industrial designed sputtering unit, and corning glass was used as substrate. The effect of annealing on the electrical and optical properties of ITO films was studied. The films were sputtered in three different ambient; Ar, a mixture of Ar and O2 and a mixture of Ar and H2. The annealing was performed in air at 300 °C for 15 min. The highest transmittance (88%) and lowest resistivity of the as-deposited films was achieved when the ITO was sputtered with a 3.3% oxygen flow (of total flow) added to the working gas (Ar). After annealing, the highest transmittance (91.3%) and lowest resistivity (2.3 x 10-4 Ω cm) was achieved when the ITO was sputtered without addition of oxygen or hydrogen gas to the working gas. SIMS measurements were performed on both as-deposited and annealed samples in order to disclose the elemental composition. |
| Databáze: | OpenAIRE |
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