Growth‐induced surface state in hydrogenated and fluorinated amorphous silicon

Autor:	A. Maruyama, Sigurd Wagner, D. S. Shen, J. Z. Liu, V. Chu
Rok vydání:	1991
Předmět:	chemistry.chemical_classification Amorphous silicon chemistry.chemical_compound Silanes chemistry Electrical resistivity and conductivity Analytical chemistry Density of states General Physics and Astronomy Chemical vapor deposition Inorganic compound Deposition (law) Surface states
Zdroj:	Journal of Applied Physics. 69:2346-2355
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.348717
Popis:	The steady‐state density of surface states during the deposition of hydrogenated and fluorinated amorphous silicon (a‐Si:H,F) can be adjusted via the deposition parameters, particularly the growth pressure. The density of surface states can be frozen in if the sample is cooled immediately after the termination of growth. We have measured frozen in densities of surface states between 1.5×1012 cm−2 and 4×1014 cm−2. a‐Si:H,F grown at high density of surface states exhibits a small Urbach energy and a low bulk defect density.
Databáze:	OpenAIRE
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