A Non-Volatile 2Mbit CBRAM Memory Core Featuring Advanced Read and Program Control

Autor:	Heinz Hönigschmid, L. Altimime, Michael Angerbauer, D. Gogl, G. M¿ller, M. Markert, Corvin Liaw, Milena Dimitrova, S. Bournat, R. Symanczyk, S. Dietrich
Rok vydání:	2006
Předmět:	Bridging (networking) business.industry Programmable metallization cell Computer science Electrical engineering Integrated circuit design Integrated circuit law.invention Non-volatile memory law Universal memory Charge control Memory architecture business
Zdroj:	2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers..
DOI:	10.1109/vlsic.2006.1705334
Popis:	A 2Mbit CBRAM (conductive bridging random access memory) core has been developed utilizing a 90nm, VDD = 1.5V process technology. The presented design uses an 8F2 (0.0648mum2) 1T1CBJ (1-transistor/1-conductive bridging junction) cell and introduces a fast feedback regulated CBJ read voltage and a novel program charge control using dummy cell bleeder devices. Random read/write cycle times les50ns are demonstrated
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f943cd3619d8db51d515b2dc0509f76c https://doi.org/10.1109/vlsic.2006.1705334 Zobrazit plný text záznamu