| Popis: |
The reduction of the wave length in the optical lithography in combination with mask enhancement techniques like phase shift pattern, optical proximity correction (OPC) or off- axis illumination requires a rapid increase in measurement accuracy and cost effective qualification of advanced photo masks. The knowledge about the impact of CD deviations, loss of pattern fidelity--especially of OPC structures--and mask defects on wafer level in more and more essential for mask qualification.© (2000) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only. |
