'Higher-κ' dielectrics for advanced silicon microelectronic devices: A combinatorial research study
| Autor: | J. Ruglovsky, Martin L. Green, Peter K. Schenck, Mark D. Vaudin, Kao-Shuo Chang |
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| Rok vydání: | 2009 |
| Předmět: |
Dynamic random-access memory
Materials science Silicon business.industry chemistry.chemical_element Nanotechnology Dielectric Integrated circuit Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Pulsed laser deposition law.invention CMOS chemistry law Microelectronics Optoelectronics Electrical and Electronic Engineering business High-κ dielectric |
| Zdroj: | Microelectronic Engineering. 86:1662-1664 |
| ISSN: | 0167-9317 |
| Popis: | Combinatorial methodology is used to rapidly screen suitable ternary [email protected] dielectrics for future complementary metal oxide semiconductor (CMOS), and dynamic random access memory (DRAM) devices. Dielectric constant (@k) and leakage current (L"C) were mapped from capacitance-voltage (C-V) and current-voltage (I-V) measurements. HfO"2-TiO"2-Y"2O"3 library films, made by pulsed laser deposition (PLD), have been characterized. We found a band of compositions in the middle of the HfO"2-TiO"2-Y"2O"3 phase diagram that have dielectric constants in the range of 50-80, with reasonably low leakage currents, that are therefore promising for these applications. |
| Databáze: | OpenAIRE |
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