X-ray diffraction study of the morphology and structure of pulse-anodized porous Si multilayers
| Autor: | A. L. Vasil’ev, Andrey A. Lomov, D. V. Novikov, V. A. Karavanskiĭ |
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| Rok vydání: | 2008 |
| Předmět: |
Materials science
Silicon Anodizing technology industry and agriculture Analytical chemistry chemistry.chemical_element General Chemistry Condensed Matter Physics Porous silicon Crystallography chemistry Electrical resistivity and conductivity Etching (microfabrication) X-ray crystallography General Materials Science Porosity Porous medium |
| Zdroj: | Crystallography Reports. 53:742-748 |
| ISSN: | 1562-689X 1063-7745 |
| DOI: | 10.1134/s1063774508050039 |
| Popis: | Porous Si layers, obtained by pulsed electrochemical etching of n-Si(001) substrates (resistivity 0.01 Ω cm) in a 1: 1 mixture of hydrofluoric acid and ethanol, have been investigated by high-resolution X-ray diffraction and electron microscopy. The average structural parameters of the layers grown (thickness, strain, porosity, pore size) are determined. It is found that pulsed anodic oxidation leads to a decrease in the average strain of layers. It is established that, at frequencies up to 1 Hz, anodic oxidation makes obtaining porous silicon multilayers with layer thicknesses of 20–300 nm containing Si nanocrystallites possible. It is shown that X-ray diffuse scattering from pores yields information about their ordering and can be used to monitor the processes of electrochemical etching used to form porous layers. |
| Databáze: | OpenAIRE |
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