Performance and RF Reliability of GaN-on-SiC HEMT's using Dual-Gate Architectures

Autor:	Shawn R. Gibb, R. Vetury, Jeffrey B. Shealy, M. J. Poulton, D. S. Green, J. McKenna, J. D. Brown, K. Leverich, P. M. Garber
Rok vydání:	2006
Předmět:	Materials science business.industry Subthreshold conduction Wide-bandgap semiconductor Electrical engineering Gallium nitride High-electron-mobility transistor chemistry.chemical_compound Reliability (semiconductor) chemistry Electric field Optoelectronics Cascode Radio frequency business
Zdroj:	2006 IEEE MTT-S International Microwave Symposium Digest.
DOI:	10.1109/mwsym.2006.249733
Popis:	AlGaN/GaN HEMTs on SiC have been fabricated with dual and single gate device geometries. Subthreshold characteristics and drain bias dependence of large signal parameters were compared to identify differences in electric field. Degradation under RF stress reveals the relative impact of temperature and electric field. The results illustrate the beneficial effects of the dual gate geometry for performance and reliability.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f9119766562c75de1cfb1f6fea8e41bd https://doi.org/10.1109/mwsym.2006.249733 Zobrazit plný text záznamu