High‐frequency performance of AlGaN channel HEMTs with high breakdown voltage

Autor:	Y. Suzuki, Imai Akifumi, M. Nakmura, Muneyoshi Suita, Takuma Nanjo, K. Kurahashi, Eiji Yagyu
Rok vydání:	2014
Předmět:	Materials science business.industry Scattering Transistor Wide-bandgap semiconductor Saturation velocity Electron Cutoff frequency law.invention law Optoelectronics Breakdown voltage Channel (broadcasting) Electrical and Electronic Engineering business
Zdroj:	Electronics Letters. 50:1577-1579
ISSN:	1350-911X 0013-5194
DOI:	10.1049/el.2014.1874
Popis:	The high-frequency characteristics of high electron mobility transistors applying AlGaN for a channel layer (AlGaN channel HEMTs) with greater impacts of alloy disorder scattering than those in conventional HEMTs with a GaN channel layer (GaN channel HEMTs) are investigated. The obtained electron saturation velocity was 4.7 × 106 cm/s and the cutoff frequency was 7 GHz in the AlGaN channel HEMTs with a gate length of 1 μm. These results are promising for several gigahertz band operations of AlGaN channel HEMTs.
Databáze:	OpenAIRE
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