Clearance of 4H-SiC Sub-Trench in Hot Chlorine Treatment

Autor:	Tomoaki Hatayama, Hidenori Koketsu, Takashi Fuyuki, Hiroshi Yano
Rok vydání:	2012
Předmět:	Materials science Mechanical Engineering Etching rate Mineralogy chemistry.chemical_element Thermal treatment Condensed Matter Physics chemistry Mechanics of Materials Trench Chlorine General Materials Science Composite material Anisotropy
Zdroj:	Materials Science Forum. :881-884
ISSN:	1662-9752
Popis:	The sub-trenches in 4H-SiC Si- and C-faces could be disappeared by the thermal treatment in chlorine ambience at 900-1000oC. The surface morphologies of the thermally treated trench-sidewalls were unchanged. It is considered that the sub-trench is selectively removed because thermally Cl2 etching rate of the (0001) Si- and (000-1) C-face are different to the (11-20) and (1-100).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f90ac5d7022fd307dabc15d22af0b525 https://doi.org/10.4028/www.scientific.net/msf.717-720.881 Zobrazit plný text záznamu