Comparison of Si1−yCy films produced by solid-phase epitaxy and rapid thermal chemical vapour deposition
| Autor: | S.K. Ray, D.W. McNeill, D.L. Gay, C.K. Maiti, G.A. Armstrong, B.M. Armstrong, H.S. Gamble |
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| Rok vydání: | 1997 |
| Předmět: |
Materials science
Metals and Alloys Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Chemical vapor deposition Epitaxy Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Phase (matter) Environmental chemistry Thermal Materials Chemistry Metalorganic vapour phase epitaxy Carbon |
| Zdroj: | Thin Solid Films. 294:149-152 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/s0040-6090(96)09389-3 |
| Popis: | Thin Si 1− y C y films with a range of carbon contents have been prepared by both solid-phase epitaxy (SPE) and rapid thermal chemical vapour deposition (RTCVD) techniques. For SPE growth, layers with carbon levels of up to 1.6 at.% exhibit strong substitutional incorporation. For RTCVD growth, substitutional carbon incorporation is difficult to achieve at a growth temperature of 800 °C, but has been achieved in layers estimated to contain 2 at.% carbon at a growth temperature of 700 °C. These results indicate that strain-compensated growth of Si 1− x − y Ge x C y with a wide range of composition should be possible in the present RTCVD system at temperatures of approximately 700 °C. © 1997 Elsevier Science S.A. All rights reserved. |
| Databáze: | OpenAIRE |
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