P‐11: Effects of Ar Dilution on N 2 O/SiH 4 PECVD for the Growth of Silicon Oxide Thin Films with Improved Breakdown Voltage Characteristics

Autor:	Aram Kim, Bokyoung Lee, Hyeona Kim, Jungho Bang, Seung Hee Nam, Kwon-Shik Park, Jeomjae Kim, Soo Young Yoon
Rok vydání:	2022
Předmět:	Organic Chemistry Biochemistry
Zdroj:	SID Symposium Digest of Technical Papers. 53:1078-1080
ISSN:	2168-0159 0097-966X
DOI:	10.1002/sdtp.15686
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f90964ef805e7ff9d0746ae08a5f9ad3 https://doi.org/10.1002/sdtp.15686 Zobrazit plný text záznamu Plný text