Efros–Shklovskii hopping in the electronic transport in 2D p-GaAs

Autor:	Jamal Hemine, Abdelhamid El Kaaouachi, L. Limouny, Adil Echchelh, S. Dlimi
Rok vydání:	2020
Předmět:	010302 applied physics Physics 0103 physical sciences General Physics and Astronomy 02 engineering and technology 021001 nanoscience & nanotechnology 0210 nano-technology 01 natural sciences
Zdroj:	Lithuanian Journal of Physics. 60
ISSN:	2424-3647 1648-8504
DOI:	10.3952/physics.v60i3.4303
Popis:	We have investigated the resistivity of a 2D hole system in GaAs in the temperature range 200 mK < T < 800 mK at zero magnetic field and low hole densities when the system is near the metal–insulator transition in the insulating side. We have found that the resistivity follows the Efros–Shklovskii variable range hopping (ES-VRH) law, this behaviour is consistent with the existence of a Coulomb gap. The resistivity scales with temperature and the prefactor has been found independent of temperature and density, thus confirming the dominance of hole–hole interaction.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f90567f64c46da35e6eda63578141120 https://doi.org/10.3952/physics.v60i3.4303 Zobrazit plný text záznamu