About extended defect formation in helium-implanted germanium

Autor:	Alain Declémy, Sophie Rousselet, J. F. Barbot, Marie-Laure David, M. F. Beaufort
Rok vydání:	2012
Předmět:	Diffraction Nuclear and High Energy Physics Materials science Silicon chemistry.chemical_element Germanium Molecular physics Crystallography chemistry Transmission electron microscopy Orientation (geometry) Penetration depth Instrumentation Helium
Zdroj:	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 272:309-312
ISSN:	0168-583X
Popis:	Extended defects generated by helium implantation in germanium at temperatures up to 500 °C have been studied using transmission electron microscopy and X-ray diffraction. Extrinsic defects as well as bubbles do readily form at room temperature. The formation of both defects follows the same trend as what is observed in silicon with a shift toward the low temperatures. The damage penetration depth seems to be, however, dependent on both the orientation and the implantation temperature.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f8ff2b42199b150f6cb741f879a15c27 https://doi.org/10.1016/j.nimb.2011.01.089 Zobrazit plný text záznamu Full Text from ScienceDirect