Nondestructive high resolution resistivity topography of Semi-insulating GaAs and InP wafers

Autor:	F. Mosel, G. Muller, W. Jantz, J. Windscheif, R. Stibal
Rok vydání:	1992
Předmět:	Materials science Annealing (metallurgy) business.industry Capacitive sensing Conductivity Gallium arsenide chemistry.chemical_compound chemistry Electrical resistivity and conductivity Electrode Indium phosphide Optoelectronics Wafer business
Zdroj:	Proceedings of the 7th Conference on Semi-insulating III-V Materials.
DOI:	10.1109/sim.1992.752695
Popis:	The capacitive charge transient measurement technique generates laterally resolved two-dimensional resistivity topograms of wafers with diameters up to 150 mm. The method is applicable to semi-insulating substrates with resistivities between 10/sup 6/ and 10/sup 9//spl Omega/cm. The range and characteristic lateral patterns of homogeneity variations in substrates of different vendors will be addressed, including LEC GaAs, VB GaAs and LEC InP. The effect of annealing treatments and interrelations between electrical and optical topograms will also be discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f8fab80eac9e1a74cd82e8f0fa9d48b2 https://doi.org/10.1109/sim.1992.752695 Zobrazit plný text záznamu