High purity GaAs prepared from trimethylgallium and arsine
| Autor: | T.S. Low, G. E. Stillman, H. M. Manasevit, K. L. Hess, P. D. Dapkus |
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| Rok vydání: | 1981 |
| Předmět: |
Photoluminescence
Materials science Photoconductivity Inorganic chemistry Analytical chemistry Chemical vapor deposition Condensed Matter Physics Inorganic Chemistry chemistry.chemical_compound Arsine Far infrared chemistry Impurity Materials Chemistry Metalorganic vapour phase epitaxy Trimethylgallium |
| Zdroj: | Journal of Crystal Growth. 55:10-23 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/0022-0248(81)90265-7 |
| Popis: | A study of the sources and control of residual impurities in GaAs grown by metalorganic chemical vapor deposition (MOCVD) is presented. The effects of source purity, growth temperature, and reactor pressure upon residual impurities incorporation are detailed. Far infrared photoconductivity and photoluminescence indicate that C, Si and Zn are the dominant residual impurities in undoped material. It is demonstrated that GaAs with total impurity concentrations as low as 5 × 1014 cm-3, μ(77 K) = 125,000 cm2/V · s, can be grown by MOCVD. The conditions for growing such material are detailed. |
| Databáze: | OpenAIRE |
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