Dual‐Functional Nonvolatile and Volatile Memory in Resistively Switching Indium Tin Oxide/HfO x Devices

Autor:	Chuang Li, Fang Wang, Wenxi Li, Tian-Ling Ren, Kailiang Zhang, Jiaqiang Shen, Junqing Wei, Jinshi Zhao, Xin Shan, Zhitang Song, Jingwei Zhang
Rok vydání:	2019
Předmět:	Materials science business.industry Materials Chemistry Optoelectronics Surfaces and Interfaces Electrical and Electronic Engineering Condensed Matter Physics business Surfaces Coatings and Films Electronic Optical and Magnetic Materials Indium tin oxide Dual (category theory) Volatile memory
Zdroj:	physica status solidi (a). 216:1900555
ISSN:	1862-6319 1862-6300
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f8ded1a27d450afec7c78477a7ed983e https://doi.org/10.1002/pssa.201900555 Zobrazit plný text záznamu Plný text