| Popis: |
We present the design and measurement results of millimeter-wave integrated circuits implemented in 0.15-μm baseline GaAs pHEMT. Both active and passive test structures were measured. We present the design of an on-chip slow wave transmission line and RF amplifier from low loss with low noise parameter measurement results at V-band. Finally, the design and measurement result of two amplifiers for low noise amplifier (LNA) and power amplifier (PA). The three-stage LNA matching networks and RF-chock were based upon slow wave transmissions lines (TLs). Peak gain of 13.2 dB at 66 GHz, in-band minimum noise figure less then 5 dB under 3-V supply voltage were obtained at a power consumption of 89 mW. The two stage power amplifier with push-pull combination in balun structure achieves a peak gain of 16.8 dB at 58 GHz OP1dB of 11.5 dBm, Psat of 16.7 dBm, and PAE of 19.8% under 3-V supply voltage were obtained at a power consumption of 188 mW. The chip size, the LNA and PA die area including all Pads are 1.25×0.6 and 1.34 × 0.6 mm2, respectively. The LNA and PA MMICs demonstrate the superior gain and power performance in low-loss TLs technology. |
