The oscillations in ESR spectra of Hg0.76Cd0.24Te implanted by Ag+at the X and Q-bands
| Autor: | A.V. Shestakov, I. I. Fazlizhanov, R. M. Eremina, M. I. Ibragimova, V. A. Shustov, I.F. Gilmutdinov, I. V. Yatsyk |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Annealing (metallurgy) Oscillation Doping Analytical chemistry Conductivity Atmospheric temperature range Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials Effective mass (solid-state physics) Ion implantation 0103 physical sciences Materials Chemistry Charge carrier Electrical and Electronic Engineering 010306 general physics |
| Zdroj: | Journal of Semiconductors. 39:052001 |
| ISSN: | 1674-4926 |
| DOI: | 10.1088/1674-4926/39/5/052001 |
| Popis: | The objects of the investigation were uniformly Ag+ doped Hg0.76Cd0.24Te mercury chalcogenide monocrystals obtained by ion implantation with subsequent thermal annealing over 20 days. After implantation and annealing the conductivity was inverted from n-type with carrier concentration of 1016 cm−3 to p-type with carrier concentration of ≈ 3.9 × 1015 cm−3. The investigations of microwave absorption derivative (dP/dH) showed the existence of strong oscillations in the magnetic field for Ag:Hg0.76Cd0.24Te in the temperature range 4.2–12 K. The concentration and effective mass of charge carrier were determined from oscillation period and temperature dependency of oscillation amplitude. We suppose that this phenomenon is similar to the de Haas–van Alphen effect in weakly correlated electron system with imperfect nesting vector. |
| Databáze: | OpenAIRE |
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